منابع مشابه
The vacuum hot pressing behavior of silicon carbide fibers coated with nanocrystalline Ti–6Al–4V
The vacuum hot pressing (VHP) of silicon carbide monofilaments coated with nanocrystalline Ti–6Al–4V has been studied. During consolidation, very high densification rates were observed, even at temperatures and pressures well below those normally used for processing conventional Ti–6Al–4V. From the cross-sections of partially consolidated specimens, the evolution of coated fiber–fiber contacts ...
متن کاملNeural Observer for the Hot Isostatic Pressing
Hot Isostatic Pressing (HIP'ing) is one of several processes used for consolidating porous materials (such as metal powders) to high density. The equations describing the HIP'ing system dynamics are immensely complicated and highly nonlinear, thus complicating any controller design for the system. Further complications arise due to the fact that one of the system's states, grain size, cannot be...
متن کاملThermal Analysis of Tantalum Carbide-Hafnium Carbide Solid Solutions from Room Temperature to 1400 C
The thermogravimetric analysis on TaC, HfC, and their solid solutions has been carried out in air up to 1400 ◦C. Three solid solution compositions have been chosen: 80TaC-20 vol % HfC (T80H20), 50TaC-50 vol % HfC (T50H50), and 20TaC-80 vol % HfC (T20H80), in addition to pure TaC and HfC. Solid solutions exhibit better oxidation resistance than the pure carbides. The onset of oxidation is delaye...
متن کاملZirconium Carbide Produced by Spark Plasma Sintering and Hot Pressing: Densification Kinetics, Grain Growth, and Thermal Properties
Spark plasma sintering (SPS) has been employed to consolidate a micron-sized zirconium carbide (ZrC) powder. ZrC pellets with a variety of relative densities are obtained under different processing parameters. The densification kinetics of ZrC powders subjected to conventional hot pressing and SPS are comparatively studied by applying similar heating and loading profiles. Due to the lack of ele...
متن کاملTantalum Carbide and Nitride Diffusion Barriers for Cu Metallisation
The reactions in the Si/TaC/Cu and Si/Ta2N/Cu metallisation systems were investigated by x-ray diffraction, Rutherford backscattering, scanning electron microscope and the transmission electron microscopy. The results were then combined with the assessed ternary SiTa-C, Ta-C-Cu, Si-Ta-N and Ta-N-Cu phase diagrams. It was found that both barriers ultimately failed due to diffusion of Cu through ...
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ژورنال
عنوان ژورنال: Journal of the Japan Society of Powder and Powder Metallurgy
سال: 1970
ISSN: 0532-8799,1880-9014
DOI: 10.2497/jjspm.17.19